IS61C64B-10J(2002) Просмотр технического описания (PDF) - Integrated Silicon Solution

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Компоненты Описание

производитель

IS61C64B-10J
(Rev.:2002)

8K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C64B

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VTERM

TBIAS

TSTG

PT

IOUT

Parameter

Terminal Voltage with Respect to GND

Temperature Under Bias

Storage Temperature

Power Dissipation

DC Output Current (LOW)

Value

Unit

–0.5 to +7.0

V

–10 to +85

°C

–65 to +150

°C

1.0

W

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

OPERATING RANGE

Range

Commercial

Ambient Temperature

0°C to +70°C

Speed

10 ns

12 ns

15 ns

VCC

5V ± 5%

5V ± 10%

5V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage(1)

ILI

Input Leakage

ILO

Output Leakage

VCC = Min., IOH = –4.0 mA

VCC = Min., IOL = 8.0 mA

GND - VIN - VCC

GND - VOUT - VCC, Outputs Disabled

Notes:

1. VIL = –3.0V for pulse width less than 10 ns.

1

2

3

4

5

6

Min.

Max.

7 Unit

2.4

—

V

—

0.4

V

2.2 VCC + 0.5

V

8

–0.5

0.8

V

–2

–2

2

2

9 µA

µA

10

11

12

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. D

07/01/02

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