IS41C8205-50JI Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS41C8205-50JI

2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Integrated Silicon Solution 

IS41C8205

IS41LV8205

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameters

Rating

Unit

VT

Voltage on Any Pin Relative to GND

5V

–1.0 to +7.0

V

3.3V

–0.5 to +4.6

VCC

Supply Voltage

5V

–1.0 to +7.0

V

3.3V

–0.5 to +4.6

IOUT

Output Current

50

mA

PD

Power Dissipation

1

W

TA

Commercial Operation Temperature

Industrial Operation Temperature

0 to +70

°C

-40 to +85

TSTG

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)

Symbol

VCC

VIH

VIL

TA

Parameter

Supply Voltage

Input High Voltage

Input Low Voltage

Commercial Ambient Temperature

Industrial Ambient Temperature

5V

3.3V

5V

3.3V

5V

3.3V

Min.

4.5

3.0

2.4

2.0

–1.0

–0.3

0

-40

Typ.

5.0

3.3

—

—

—

—

—

—

Max.

5.5

3.6

VCC + 1.0

VCC + 0.3

0.8

0.8

70

85

Unit

V

V

V

°C

°C

CAPACITANCE(1,2)

Symbol Parameter

Max.

CIN1

Input Capacitance: A0-A10(A11)

5

CIN2

Input Capacitance: RAS, CAS, WE, OE

7

CIO

Data Input/Output Capacitance: I/O0-I/O3

7

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz.

Unit

pF

pF

pF

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

06/24/01

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