IS24C01 Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS24C01

1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM

Integrated Silicon Solution 

IS24C01 IS24C02 IS24C04 IS24C08 IS24C16

DC ELECTRICAL CHARACTERISTICS

Symbol Parameter

Test Conditions

VOL1

Output LOW Voltage

VCC = 1.8V, IOL = 0.15 mA

VOL2

Output LOW Voltage

VCC = 2.5V, IOL = 1.0 mA

VIH

Input HIGH Voltage

VIL

Input LOW Voltage

ILI

Input Leakage Current

VIN = VCC max.

ILO

Output Leakage Current

Notes: VIL min and VIH max are reference only and are not tested.

ISSI ®

Min.

Max.

Unit

—

0.2

V

—

0.4

V

VCC X 0.7 VCC + 0.5

V

–1.0 VCC X 0.3

V

—

3

µA

—

3

µA

POWER SUPPLY CHARACTERISTICS

Symbol Parameter

ICC1

Vcc Operating Current

ICC2

Vcc Operating Current

ISB1

Standby Current

ISB2

Standby Current

Test Conditions

READ at 100 KHz (Vcc = 5V)

WRITE at 100 KHz (Vcc = 5V)

Vcc = 1.8V

Vcc = 5.5V

Min.

Max.

Unit

—

1.0

mA

—

3.0

mA

—

4.0

µA

—

8.0

µA

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

6

COUT

Output Capacitance

VOUT = 0V

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.

Unit

pF

pF

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

11

Rev. D

06/25/02

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