IS24C128A Просмотр технического описания (PDF) - Integrated Silicon Solution
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IS24C128A Datasheet PDF : 17 Pages
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IS24C128A
IS24C256A
DC ELECTRICAL CHARACTERISTICS
Industrial (TA = -40oC to +85oC), Automotive (TA = -40oC to +125oC)
Symbol Parameter
Test Conditions
VOL1
Output Low Voltage
VCC = 1.8V, IOL = 0.15 mA
VOL2
Output Low Voltage
VCC = 2.5V, IOL = 2.1 mA
VIH
Input High Voltage
VIL
Input Low Voltage
ILI
Input Leakage Current
VIN = VCC max.
ILO
Output Leakage Current
Notes: VIL min and VIH max are reference only and are not tested.
POWER SUPPLY CHARACTERISTICS
Industrial (TA = -40oC to +85oC), Automotive (TA = -40oC to +125oC)
Symbol Parameter
ICC1
Vcc Operating Current
ICC2
Vcc Operating Current
ISB1
Standby Current
ISB2
Standby Current
ISB3
Standby Current
Test Conditions
Read at 400 KHz (Vcc = 2.5V)
Write at 400 KHz (Vcc = 2.5V)
Vcc = 1.8V
Vcc = 2.5V
Vcc = 5.0V
ISSI ®
Min.
Max.
—
0.2
—
0.4
VCC X 0.7 VCC + 0.5
–1.0 VCC X 0.3
—
3
—
3
Unit
V
V
V
V
µA
µA
Min.
Max.
Unit
—
3.0
mA
—
3.0
mA
—
15
µA
—
20
µA
—
25
µA
AC ELECTRICAL CHARACTERISTICS
Industrial (TA = -40oC to +85oC)
1.8V ≤ Vcc < 2.5V 2.5V ≤ Vcc < 4.5V 4.5V ≤ Vcc ≤ 5.5V(1)
Symbol Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
fSCL
SCL Clock Frequency
T
Noise Suppression Time(1)
0 100
— 100
0 400
— 50
0 1000
KHz
— 50
ns
tLow
Clock Low Period
4.7 —
1.2 —
0.6 —
µs
tHigh
Clock High Period
tBUF
Bus Free Time Before New Transmission(1)
4—
4.7 —
0.6 —
1.2 —
0.4 —
µs
0.5 —
µs
tSU:STA
Start Condition Setup Time
4—
0.6 —
0.25 —
µs
tSU:STO
Stop Condition Setup Time
4—
0.6 —
0.25 —
µs
tHD:STA
Start Condition Hold Time
4—
0.6 —
0.25 —
µs
tHD:STO
Stop Condition Hold Time
4—
0.6 —
0.25 —
µs
tSU:DAT
Data In Setup Time
100 —
100 —
100 —
ns
tHD:DAT
Data In Hold Time
0—
0—
0—
ns
tSU:WP
WP pin Setup Time
4—
0.6 —
0.6 —
µs
tHD:WP
WP pin Hold Time
4.7 —
1.2 —
1.2 —
µs
tDH
Data Out Hold Time
(SCL Low to SDA Data Out Change)
100 —
50 —
50 —
ns
tAA
Clock to Output (SCL Low to SDA Data Out Valid) 100 3500
tR
SCL and SDA Rise Time(1)
— 1000
tF
SCL and SDA Fall Time(1)
— 300
50 900
— 300
— 300
50 400
ns
— 300
ns
— 100
ns
tWR
Write Cycle Time
— 10
—5
—5
ms
Notes:
1. This parameter is characterized but not 100% tested.
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION Rev. 00B
06/27/06
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