IS22C040PI(1998) Просмотр технического описания (PDF) - Integrated Silicon Solution
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производитель
IS22C040PI Datasheet PDF : 11 Pages
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IS22C040
BONDING DIAGRAM
6
5
7
4
8
3
9
2
10
1
11
20
12
19
13
18
14
17
Y 15
16
X
(0,0)
Note: Substrate must be connected to GND
Pad size = 100 µm x 100 µm
DC CHARACTERISTICS
Symbol
VCC
ISB
IOP
VIH
VIL
IOH
IOL
ICO
ISTPH
TSTPL
ILED
∆F/F
Parameter Description
Operating Voltage
Standby Current
Operating Current
Input HIGH Voltage
Input LOW Voltage
VOUT LOW O/P Current
VOUT HIGH O/P Current
COUT O/P Current
STP LOW O/P Current
STP HIGH O/P Current
Output Current LED
Frequency Stability
Integrated Silicon Solution, Inc.
VP009-1C
10/01/98
ISSI®
BONDING PARAMETERS
Pin
Name
X
1
S8
3451.9
2
LED1
3451.9
3
VOUT1
3451.9
4
VOUT2
3451.9
5
GND
3368.10
6
STP
137.18
7
LED2
100.4
8
COUT
100.4
9
OSC
100.4
10
S5
100.4
11
S6
100.4
12
VPP
100.4
13
S1
100.4
14
S2
100.4
15
VCC
187.05
16
S3
3372.5
17
S4
3451.9
18
SBT
3451.9
19
IRP
3451.9
20
S7
3451.94
Y
1599.7
1861.0
2147.6
2444.5
2803.35
2795.93
2486.3
2245.0
1790.0
1469.5
1230.0
989.6
662.3
422.7
113.78
141.8
581.5
836.0
1090.6
1345.13
Condition
VCC = 3.0V, I/O Open
Vcc = 3.0V, I/O Open
Vcc = 3.0V
Vcc = 3.0V
Vcc = 3.0V, VOUT = 0V
Vcc = 3.0V, VOUT = 3.0V
Vcc = 3.0V, VCOUT = 0.7V
Vcc = 3.0V, VSTP = 0V
Vcc = 3.0V, VSTP = 3.0V
Vcc = 3.0V – 6.0V
FOSC(3V) – FOSC(3.5V)
FOSC (3V)
Min.
3.0
—
—
2.5
–0.3
—
—
—
—
—
6
—
Typ.
4.5
1
—
3.0
0
–12
12
–2
–5
5
8
—
Max. Unit
6.0
V
5
µA
100 µA
3.5
V
0.3
V
— mA
— mA
— mA
— mA
— mA
10 mA
5
%
5
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