IRS2011SPBF(2006) Просмотр технического описания (PDF) - International Rectifier
Номер в каталоге
Компоненты Описание
производитель
IRS2011SPBF Datasheet PDF : 19 Pages
| |||
Data Sheet No.PD60221
IRS2011(S)PbF
Features
HIGH AND LOW SIDE DRIVER
• Floating channel designed for bootstrap operation Product Summary
• Fully operational up to +200 V
• Tolerant to negative transient voltage, dV/dt immune
VOFFSET
200 V max.
• Gate drive supply range from 10 V to 20 V
• Independent low-side and high-side channels
• Input logic HIN/LIN active high
IO+/-
1.0 A /1.0 A typ.
• Undervoltage lockout for both channels
• 3.3 V and 5 V input logic compatible
VOUT
10 V - 20 V
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
ton/off
60 ns typ.
• RoHS compliant
Applications
Delay Matching 20 ns max.
• Audio Class D amplifiers
• High power DC-DC SMPS converters
• DC motor drive
Packages
Description
The IRS2011 is a high power, high speed power MOSFET
driver with independent high and low-side referenced output
channels, ideal for Audio Class D and DC-DC converter appli-
IRS2011
IRS2011S
cations. Logic inputs are compatible with standard CMOS or
8-Lead PDIP
8-Lead SOIC
LSTTL output, down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channel can be used to drive an N-
channel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200 V
HIN
LIN
COM
5
HIN
LIN
COM
8 LO
VS 4
HO
VB
1
VCC
TO
LOAD
VCC
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
Share Link: 