MT4LC4M4E9TG-5 Просмотр технического описания (PDF) - Micron Technology
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MT4LC4M4E9TG-5 Datasheet PDF : 23 Pages
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TECHNOLOGY, INC.
4 MEG x 4
EDO DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 2, 3, 9, 10, 11, 12, 17) (VCC [MIN] ≤ VCC ≤ VCC [MAX])
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS# during
HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
Read command hold time (referenced to CAS#)
Read command setup time
Refresh period (2,048 cycles)
Refresh period (4,096 cycles)
Refresh period S version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
Read command hold time (referenced to RAS#)
RAS# hold time
READ WRITE cycle time
RAS# to WE# delay time
Write command to RAS# lead time
Transition time (rise or fall)
Write command hold time
Write command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE#
Write command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
tORD
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWHZ
tWP
tWPZ
tWRH
tWRP
-5
MIN
MAX
0
20
47
50
9
9
50
10,000
50
125,000
100
84
11
0
0
32
64
128
30
5
90
0
13
116
67
13
2
50
8
38
0
0
12
5
10
8
8
-6
MIN
MAX
0
UNITS
ns
25
ns
56
ns
60
ns
12
ns
10
ns
60
10,000
ns
60
125,000
ns
100
µs
104
ns
14
ns
0
ns
0
ns
32
ms
64
ms
128
ms
40
ns
5
ns
105
ns
0
ns
15
ns
140
ns
79
ns
15
ns
2
50
ns
10
ns
45
ns
0
ns
0
15
ns
5
ns
10
ns
10
ns
10
ns
NOTES
19
21
22
23
23
13
13
4 Meg x 4 EDO DRAM
D47.pm5 – Rev. 3/97
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1997, Micron Technology, Inc.
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