IRLR3105PBF(2004) Просмотр технического описания (PDF) - International Rectifier

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производитель

IRLR3105PBF
(Rev.:2004)

AUTOMOTIVE MOSFET

International Rectifier 

IRLR/U3105PbF

1600

1200

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, C ds

Crss = Cgd

Coss = Cds + Cgd

SHORTED

Ciss

800

Coss

400

Crss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID= 15A

16

12

VDS= 44V

VDS= 28V

VDS= 11V

8

4

0

0

FOR TEST CIRCUIT

SEE FIGURE 13

10

20

30

40

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100.0

TJ = 175°C

10.0

1.0

TJ = 25°C

VGS = 0V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA

LIMITED BY RDS(on)

10

100µsec

1

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

1

10

1msec

10msec

100

VDS , Drain-toSource Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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