IRH4150 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRH4150

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)

International Rectifier 

Pores-tI-rIrraraddiaiatitoionn

IRH7150

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 8a. Gate Stress of VGSS

Equals 12 Volts During

Radiation

Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals

of Rad Hard HEXFET During 80% of BVDSS During Radiation

1x1012 Rad (Si)/Sec Exposure

www.irf.com

Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

5

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