IRHM7160 Просмотр технического описания (PDF) - International Rectifier
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IRHM7160 Datasheet PDF : 8 Pages
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PRraed-iIarrtaiodniaCtihoanracteristics
IRHM7160, JANSR2N7432
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100 K Rads(Si)1
Min Max
300K-1000K Rads (Si)2 Units
Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100
VGS(th) Gate Threshold Voltage
2.0
IGSS
Gate-to-Source Leakage Forward —
IGSS
Gate-to-Source Leakage Reverse —
IDSS
Zero Gate Voltage Drain Current
—
RDS(on) Static Drain-to-Source Ã
—
On-State Resistance (TO-3)
—
100
—V
4.0 1.25 4.5
100
-100
— 100 nA
— -100
25
—
25 µA
0.045
— 0.062 Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS = 80V, VGS = 0V
VGS = 12V, ID = 32A
VSD
Diode Forward Voltage Ã
— 1.8
—
1.8 V
VGS = 0V, IS = 35A
1. Part number IRHM7160 (JANSR2N7432)
2. Part numbers IRHM3160 (JANSF2N7432), IRHM4160 (JANSG2N7432) and IRHM8160 (JANSH2N7432)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
(MeV/(mg/cm2)) (MeV)
Cu
28
285
Br
36.8
305
Range
VDS(V)
(µm) @VGS = 0V @VGS= -5V @VGS= -10V @VGS= -15V @VGS= -20V
43
100
100
100
80
60
39
100
90
70
50
—
120
100
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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