DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IRHM3130 Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге
Компоненты Описание
производитель
IRHM3130
IR
International Rectifier IR
IRHM3130 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PRraed-iIartriaodniaCtihoanracteristics
IRHM7130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)
Min
300 - 1000K Rads (Si) Units
Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100
V / 5  J D  Gate Threshold Voltage
2.0
IGSS
Gate-to-Source Leakage Forward —
IGSS
Gate-to-Source Leakage Reverse
—
IDSS
Zero Gate Voltage Drain Current
—
RDS(on) Static Drain-to-Source"
—
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source"
—
On-State Resistance (TO-254AA)
VSD
Diode Forward Voltage"
—
—
4.0
100
-100
25
0.18
0.18
1.8
100
—V
1.25 4.5
— 100 nA
— -100
—
25 µA
— 0.24
— 0.24
— 1.8 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =9.0A
VGS = 12V, ID =9.0A
VGS = 0V, IS = 14A
1. Part numbers IRHM7130
2. Part number IRHM8130, IRHM3130 and IRHM4130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
MeV/(mg/cm )) (MeV)
Cu
28
285
Br
36.8
305
Range
(µm)
43
39
VDS(V)
@VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
100
100
100
80
60
100
90
70
50
—
120
100
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]