IRHM7360 Просмотр технического описания (PDF) - International Rectifier

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IRHM7360

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRHM7360, IRHM8360 Devices

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) 

Parameter

Min

BVDSS

Drain-to-Source Breakdown Voltage 400

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

Voltage

RDS(on)

Static Drain-to-Source On-State

—

Resistance

—

VGS(th)

Gate Threshold Voltage

2.0

gfs

Forward Transconductance

6.0

IDSS

Zero Gate Voltage Drain Current

—

—

IGSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

Gate-to-Source Leakage Forward

—

Gate-to-Source Leakage Reverse

—

Total Gate Charge

—

Gate-to-Source Charge

—

Gate-to-Drain (‘Miller’) Charge

—

Turn-On Delay Time

—

Rise Time

—

Turn-Off Delay Time

—

Fall Time

—

Internal Drain Inductance

—

LS

Internal Source Inductance

—

Ciss

Input Capacitance

—

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

Typ Max Units

—— V

0.45 — V/°C

Test Conditions

VGS = 0V, ID = 1.0mA

Reference to 25°C, ID = 1.0mA

— 0.22

— 0.25

— 4.0

——

— 50

— 250

— 100

— -100

— 210

— 45

— 120

— 33

— 59

— 140

— 75

8.7 —

8.7 —

5600 —

990 —

380 —

Ω

V

S( )

µA

nA

nC

VGS = 12V, ID = 14A …

VGS = 12V, ID = 22A

VDS = VGS, ID = 1.0mA

VDS > 15V, IDS = 14A …

VDS= 0.8 x Max Rating,VGS=0V

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS = 12V, ID =22A

VDS = Max Rating x 0.5

VDD = 200V, ID = 22A,

ns

RG = 2.35Ω

nH

pF

Measured from drain Modified MOSFET sym-

lead, 6mm (0.25 in) bol showing the internal

from package to center inductances.

of die.

Measured from source

lead, 6mm (0.25 in)

from package to

source bonding pad.

VGS = 0V, VDS = 25V

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics 

Parameter

Min Typ Max Units

Test Conditions

IS Continuous Source Current (Body Diode) — — 22

ISM Pulse Source Current (Body Diode) ‚

— — 88

A Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

VSD Diode Forward Voltage

trr Reverse Recovery Time

QRR Reverse Recovery Charge

— — 1.8 V

— — 1000 ns

— — 11 µC

Tj = 25°C, IS = 22A, VGS = 0V …

Tj = 25°C, IF =22A, di/dt ≤ 100A/µs

VDD ≤ 50V …

ton Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

RthCS

RthJA

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

Min Typ Max Units

— — 0.5

— 0.21 —

— — 48

°C/W

Test Conditions

Typical socket mount

2

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