IRH7450 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRH7450

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRH7450, IRH8450 Devices

Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc

Radiation Characterstics

Fig 10. Typical Output Characteristics

Pre-Irradiation

Fig 11. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 12. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

6

Fig 13. Typical Output Characteristics

Post-Irradiation 1 Mega Rads(Si)

www.irf.com

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