IRH7450 Просмотр технического описания (PDF) - International Rectifier
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IRH7450 Datasheet PDF : 12 Pages
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IRH7450, IRH8450 Devices
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a VDS bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 105 Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7450. Post-irradiation limits of the devices
irradiated to 1 x 106 Rads (Si) are presented in Table
1, column 2, IRH8450. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 1012 Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRH7450 IRH8450
100K Rads (Si) 1000K Rads (Si) Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 — 500 — V
VGS(th) Gate Threshold Voltage
2.0 4.0 1.25 4.5
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
IGSS
IGSS
Gate-to-Source Leakage Forward — 100 — 100 nA
Gate-to-Source Leakage Reverse — -100 — -100
VGS = 20V
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
— 50 — 100 µA VDS=0.8 x Max Rating, VGS =0V
RDS(on)1 Static Drain-to-Source
— 0.45 — 0.6 Ω
VGS = 12V, ID = 7.0A
On-State Resistance One
VSD
Diode Forward Voltage
— 1.6 — 1.6 V TC = 25°C, IS =11A,VGS = 0V
Table 2. High Dose Rate
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Test Conditions
— — 400 — — 400 V Applied drain-to-source voltage during
gamma-dot
— 8 — — 8 — A Peak radiation induced photo-current
— — 15 — — 3 A/µsec Rate of rise of photo-current
27 — — 133 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si)
Ion
(MeV/mg/cm2)
Cu
28
Fluence
(ions/cm2)
3x 105
Range
(µm)
~43
VDSBias
(V)
275
VGS Bias
(V)
-5
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