IRFP254A Просмотр технического описания (PDF) - International Rectifier
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IRFP254A Datasheet PDF : 7 Pages
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IRFP254A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
250 -- -- V
-- 0.27 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
-- -- 0.14 Ω
-- 17.45 --
-- 2300 3000
-- 345 400 pF
-- 155 180
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=250V
VDS=200V,TC=125°C
VGS=10V,ID=12.5A
(4)
VDS=40V,ID=12.5A
(4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
-- 21 60
-- 20 60
VDD=125V,ID=25A,
-- 86 190 ns RG=5.3Ω
See Fig 13 (4) (5)
-- 40 100
-- 88 114
VDS=200V,VGS=10V,
-- 16 -- nC ID=25A
-- 35.6 --
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 25
Integral reverse pn-diode
A
-- 100
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=25A,VGS=0V
-- 255 -- ns TJ=25°C,IF=25A
-- 2.3 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=2mH, IAS=25A, VDD=50V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 25A, di/dt ≤ 300A/µs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
Rev. B
©1999 Fairchild Semiconductor Corporation
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