IRFP254A Просмотр технического описания (PDF) - International Rectifier

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IRFP254A

Advanced Power MOSFET

International Rectifier 

$GYDQFHG 3RZHU 026)(7

IRFP254A

FEATURES

♦ Avalanche Rugged Technology

♦ Rugged Gate Oxide Technology

♦ Lower Input Capacitance

♦ Improved Gate Charge

♦ Extended Safe Operating Area

♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

♦ Low RDS(ON): 0.108Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25°C)

Continuous Drain Current (TC=100°C)

Drain Current-Pulsed

(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(2)

Total Power Dissipation (TC=25°C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Thermal Resistance

Symbol

RθJC

RθCS

RθJA

Characteristic

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

BVDSS = 250 V

RDS(on) = 0.14Ω

ID = 25 A

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

Value

250

25

15.9

100

±30

781

25

22.1

4.8

221

1.79

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Typ.

--

0.24

--

Max.

0.56

--

40

Units

°C/W

Rev. B

©1999 Fairchild Semiconductor Corporation

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