IRFM Просмотр технического описания (PDF) - Semelab - > TT Electronics plc
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IRFM Datasheet PDF : 2 Pages
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IRFM
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage VGS = 0
ID = 1mA
200
DBVDSS Temperature Coefficient of
Reference to 25°C
DTJ Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance 2
VGS = 10V
VGS = 10V
ID = 17A
ID = 27.4A
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250mA
2
gfs
Forward Transconductance 2
VDS ³ 15V
IDS = 27.4A
9
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
CDC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
VGS = 0
VDS = 25V
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
55
Qgs Gate – Source Charge
ID = 27.4A
8
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
30
td(on)
tr
td(off)
tf
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 100V
ID = 27.4A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 1
VSD Diode Forward Voltage 2
trr
Reverse Recovery Time 2
Qrr
Reverse Recovery Charge 2
ton
Forward Turn–On Time
IS = 27.4A
TJ = 25°C
VGS = 0
IF = 27.4A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
LS
Internal Source Inductance Measured from 6mm down source lead to source bond pad
Typ.
0.28
3500
700
110
12
Negligible
8.7
8.7
Max
0.100
0.105
4
25
250
100
–100
115
22
60
35
190
170
130
27.4
110
1.9
950
9.0
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