IRFBC40LPBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFBC40LPBF

Power MOSFET

Vishay Semiconductors 

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

Pulsed Diode Forward Currenta

integral reverse

ISM

p - n junction diode

D

G

S

-

-

6.2

A

-

-

25

Body Diode Voltage

VSD

TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb

-

-

1.5

V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

trr

-

450

940

ns

TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb

Qrr

-

3.8

7.9

µC

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

c. Uses IRFBC40/SiHFBC40 data and test conditions.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91116

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

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