IRF7862PBF Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF7862PBF

HEXFET©
Power MOSFET

International Rectifier 

IRF7862PbF

1000

100

≤60µs PULSE WIDTH

Tj = 25°C

10

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

1000

≤60µs PULSE WIDTH

Tj = 150°C

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

1

0.1

2.3V

0.01

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

2.3V

1

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

VDS = 15V

≤60µs PULSE WIDTH

10

TJ = 150°C

TJ = 25°C

1

0.1

1

2

3

4

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

1.6

ID = 21A

VGS = 10V

1.4

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

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