SIHF740A-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

SIHF740A-E3

Power MOSFET

Vishay Semiconductors 

IRF740A, SiHF740A

Vishay Siliconix

105

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

104

Crss = Cgd

Coss = Cds + Cgd

Ciss

103

Coss

102

10

Crss

1

1

10

102

103

91051_05

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

102

10

TJ = 150 °C

1

TJ = 25 °C

VGS = 0 V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

91051_07

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 10 A

VDS = 320 V

16

VDS = 200 V

12

VDS = 80 V

8

4

For test circuit

see figure 13

0

0

10

20

30

40

91051_06

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

102

Operation in this area limited

by RDS(on)

10 µs

10

100 µs

1 ms

TC = 25 °C

TJ = 150 °C

1

Single Pulse

10 ms

10

102

103

91051_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91051

S11-0508-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: