IRF7473PBF Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF7473PBF

HEXFET® Power MOSFET

International Rectifier 

IRF7473PbF

0.028

0.035

0.026

0.024

VGS = 10V

0.030

0.025

ID = 6.9A

0.022

0

20

40

60

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

0.020

6.0

8.0

10.0

12.0

14.0

16.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

400

ID

TOP

1.8A

3.3A

BOTTOM 4.1A

300

200

V(BR)DSS

tp

I AS

VDS

L

RG

1200VV

tp

D.U.T

IAS

0.01Ω

15V

DRIVER

+

-

VDD

A

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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