IRF7811A Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF7811A

HEXFET
Power MOSFET

International Rectifier 

IRF7811A

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

28 ––– ––– V VGS = 0V, ID = 250µA

––– 0.025 –––

––– 8.7 10

––– 10 12

V/°C Reference to 25°C, ID = 1mA

f mΩ VGS = 10V, ID = 11A

f VGS = 4.5V, ID = 9.0A

1.0 ––– 3.0 V

––– -4.0 ––– mV/°C VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 150

µA VDS = 30V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 100°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 12V

––– ––– -100

VGS = -12V

gfs

Forward Transconductance

28 ––– ––– S VDS = 15V, ID = 9.0A

Qg

Total Gate Charge

––– 17 26

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-Source Charge

Post-Vth Gate-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 3.3 –––

VDS = 15V

––– 1.3 ––– nC VGS = 4.5V

––– 4.7 –––

ID = 9.0A

––– 7.2 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 6.0 –––

Qoss

Output Charge

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

––– 24 –––

0.9 ––– 3.7

––– 7.5 –––

––– 4.1 –––

––– 19 –––

––– 6.5 –––

nC VDS = 16V, VGS = 0V

Ω

f VDD = 15V, VGS = 4.5V

ns ID = 9.0A

Clamped Inductive Load

Ciss

Input Capacitance

––– 1760 –––

VGS = 0V

Coss

Output Capacitance

––– 960 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 54 –––

ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

d Parameter

Single Pulse Avalanche Energy

™ Avalanche Current

Typ.

–––

–––

Max.

58

9.0

Units

mJ

A

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

––– ––– 11

––– ––– 91

––– 0.8 1.0

––– 0.66 –––

––– 72 110

––– 93 140

––– 73 110

––– 100 150

MOSFET symbol

A showing the

integral reverse

p-n junction diode.

V

e TJ = 25°C, IS = 9.0A, VGS = 0V

e TJ = 125°C, IS = 9.0A, VGS = 0V

e ns TJ = 25°C, IF = 9.0A, VR = 15V

nC di/dt = 100A/µs

e ns TJ = 125°C, IF = 9.0A, VR = 15V

nC di/dt = 100A/µs

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