PD - 93811
IRF7811A
Applications
HEXFET® Power MOSFET
l High Frequency Synchronous Buck
Converters for Computer Processor Power
VDSS RDS(on) max Qg
l High Frequency Isolated DC-DC
28V
12mΩ
17nC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l 100% RG Tested
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
S
1
S
2
S
3
AA
8
D
7
D
6
D
l Fully Characterized Avalanche Voltage
G
4
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Smoldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
g Parameter
Junction-to-Drain Lead
fg Junction-to-Ambient
Max
11f
f 9.1
91
2.5
1.6
0.02
±12
-55 to + 150
300 (1.6mm from case)
Typ
Max
–––
20
–––
50
Units
A
W
W/°C
V
°C
Units
°C/W
Notes through
are on page 10
www.irf.com
1
11/14/03