IR01H214 Просмотр технического описания (PDF) - International Rectifier
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IR01H214 Datasheet PDF : 7 Pages
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IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2.
Symbol
ton
toff
tr
tf
MT
trr
Qrr
Definition
Turn-On Propagation Delay (see note 2)
Turn-Off Propagation Delay (see note 2)
Turn-On Rise Time (see note 2)
Turn-Off Fall Time (see note 2)
Delay Matching, HS & LS Turn-On/Off
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
Min.
—
—
—
—
—
—
—
Typ. Max. Units Test Conditions
130 200
Vs = 0V
90 200
Vs = 500V
80 120 ns
40 70
30 —
260 —
IF = 0.7A
0.7 — µC
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input
voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to
COM.
Symbol
VCCUV+
VCCUV-
IQCC
IQBS
Ios
VIH
VIL
IIN+
IIN-
Rds(on)
VSD
Definition
VCC Supply Undervoltage Positive Going
Threshold
VCC Supply Undervoltage Negative Going
Threshold
Quiescent VCC Supply Current
Quiescent VBS Supply Current
Offset Supply Leakage Current
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Bias Current
Logic “0” Input Bias Current
Static Drain-to-Source On-Resistance 214
224
420
Diode Forward Voltage
214/420
224
Min. Typ. Max. Units Test Conditions
8.8 9.3 9.8 V
7.5
8.2 8.6
VV
— 140 240 µA
—
20
50 µA
—
—
50 µA
VB = VS = 500V
2.7 — —
—
— 0.8
—
20 40
—
— 1.0
—
2.0 —
—
1.1 —
—
3.0 —
—
0.8 —
— 0.85 —
V VCC = 10V to 20V
VV
VVCCCC== 1100VV ttoo2200VV
µA
Ω
o
Id=850mA/TJ=150 C
Ω
Id=1.1A/TJ=150oC
Ω Id=700mA/TJ=150oC
V Id=700mA/TJ=150oC
o
Id=1.1A/TJ=150 C
4
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