IR01H214 Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

производитель

IR01H214

HIGH VOLTAGE HALF BRIDGE

International Rectifier 

Data Sheet No. PD-6.075-G

IR01H(D)214 / IR01H(D)214-P2

IR01H(D)224 / IR01H(D)224-P2

IR01H(D)420 / IR01H(D)420-P2

HIGH VOLTAGE HALF BRIDGE

Features

• Output Power MOSFETs in half-bridge configuration

• 500V rated breakdown voltage

• High side gate drive designed for bootstrap

operation

• Matched propagation delay for both channels

• Undervoltage lockout

• 5V Schmitt-triggered input logic

• Half-Bridge output in phase with HIN

• Heatsink version (P2) with improved PD

Description

The IR01H(D)xxx is a high voltage, high speed half

bridge. Proprietary HVIC and latch immune CMOS

technologies, along with the HEXFET power

MOSFET technology, enable ruggedized single

package construction. The logic inputs are compat-

ible with standard CMOS or LSTTL outputs. The

front end features an independent high and low side

driver in phase with the logic compatible input

signals. The output features two HEXFETs in a half-

bridge configuration with a high pulse current buffer

stage designed for minimum cross-conduction in the

half bridge. Propagation delays for the high and low

side power MOSFETs are matched to simplify use.

Product Summary

VIN (max)

250V- 214/224

500V - 420

ton/off

trr

RDS(on)

130 & 90 ns

260 ns

2.0Ω - H214

1.1Ω - H224

3.0Ω - H420

PD(TA = 25oC)

2.0W

4.0W - P2

Packages

Typical Connection

VIN

Vcc

HIN

L IN

COM

HV DC Bus

D1

1 Vcc VB 6

2 HIN

VIN 9

3 L IN

VO 7

COM

4

NOTE: D1 is not required for

the HD type

TO

LOAD

1

Share Link: