HBD677 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HBD677

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6620-B

Issued Date : 1994.07.22

Revised Date : 2000.10.01

Page No. : 2/3

10000

Current Gain & Collector Current

10000

Saturation Voltage & Collector Current

VCE=3V

1000

1000

VCE(sat) @ IC=50IB

100

100

1000

Collector Current (mA)

10000

On Voltage & Collector Current

10

100

100

1000

Collector Current (mA)

10000

Capacitance & Reverse-Biased Voltage

1000

100

1

VBE(on) @ VCE=3V

Cob

10

0.1

100

100

10

1

0.1

0.01

1

1000

Collector Current (mA)

Safe Operating Area

10000

PT=1 ms

PT=100 ms

PT=1 s

10

100

Forward Voltage (V)

1000

1

1

10

100

Reverse Biased Voltage (V)

HSMC Product Specification

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