IMB11A(2012) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

IMB11A
(Rev.:2012)

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

EMB11 / UMB11N / IMB11A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

EMB11 / UMB11N

IMB11A

Junction temperature

Range of storage temperature

Symbol

VCC

VIN

IO

IC(MAX.)*1

PD *2

Tj

Tstg

Data Sheet

Values

Unit

-50

V

-40 to +10

V

-50

mA

-100

mA

150 (Total)*3

mW

300 (Total)*4

mW

150

°C

-55 to +150

°C

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Symbol

Input voltage

VI(off)

VI(on)

Output voltage

VO(on)

Input current

II

Output current

IO(off)

DC current gain

GI

Input resistance

R1

Resistance ratio

R2/R1

Conditions

VCC = -5V, IO = -100mA

VO = -0.3V, IO = -10mA

IO / II = -10mA / -0.5mA

VI = -5V

VCC = -50V, VI = 0V

VO = -5V, IO = -5mA

-

-

Transition frequency

fT *1

VCE = -10V, IE = 5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Min.

-

-3.0

-

-

-

20

7

0.8

-

Typ. Max. Unit

-

-0.5

V

-

-

-0.1 -0.3

V

- -0.88 mA

-

-0.5 mA

-

-

-

10

13

kW

1

1.2

-

250

-

MHz

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© 2012 ROHM Co., Ltd. All rights reserved.

2/7

2012.06 - Rev.B

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