DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ILC6383 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
ILC6383 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PRODUCT SPECIFICATION
ILC6383
General Electrical Characteristics (continued)
Parameter
Symbol
Conditions
Min. Typ.
Max.
Units
Input Voltage Range
Battery Input Current
in Load Disconnect
Mode
VIN
IIN(SD)
VOUT = VOUT(nominal) ± 4%
IOUT = 10mA
VLBI/SD < 0.4V, VOUT = 0V
(short circuit)
0.9
VOUT(nominal) V
1
+0.5V
1
10
µA
Switch on resistance
Rds(on)
N-Channel MOSFET
P-Channel MOSFET
400
m
750
Oscillator Frequency
LBI Input Threshold
fOSC
VREF
255
300
345
kHz
1.175 1.250
1.150
1.325
1.350
Input Leakage Current I LEAK
Pins LB/SD, SEL and VFB,
(Note 3)
200
nA
LBI Hold Time
tHOLD(LBI) (Note 4)
100
120
mS
Notes:
1. Absolute maximum ratings indicate limits which, when exceeded, may result in damage to the component. Electrical
specifications do not apply when operating the device outside its rated operating conditions.
2. Specified min/max limits are production tested or guaranteed through correlation based on statistical control methods.
Measurements are taken at constant junction temperature as close to ambient temperature as possible using low duty cycle
pulse testing.
3. Guaranteed by design.
4. In order to get a valid low-battery-output (LBO) signal, the input voltage must be lower than the low-battery-input (LBI)
threshold for a duration greater than the low battery hold time (tHOLD(LBI)). This feature eliminates false triggering due to
voltage transients at the battery terminal.
REV. 1.2.6 6/13/02
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]