IK3466 Просмотр технического описания (PDF) - IK Semicon Co., Ltd
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производитель
IK3466
IK Semicon Co., Ltd
IK3466 Datasheet PDF : 10 Pages
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IK3466
Table 3 continued
Parameter
BYPASS pin charge current
Symbol
ICH1
BYPASS pin voltage
BYPASS pin voltage
hysteresis
EN/UV pin line under-voltage
threshold current
Protection circuit
ICH2
VBP
VBPH
ILUV
Mode of
measurements
VBP = 0 V,
TJ = 25 oC
Note 3
VBP = 4 V,
TJ = 25 oC
Note 3
Note 3
-
ТJ = 25°C
Target
Min.
Max.
-7,5
-2,5
-4,5
-1,5
5,6
6,15
0,8
1,2
44
54
Unit
mA
V
V
A
Current limit
ILIMIT
di/dt = 70 mA/s
325
375
mA
Initial current limit
IINIT
Leading edge blanking time
tLEB
Thermal Shutdown
Temperature
tSD
ТJ = 25°C
ТJ = 25°C
Note 4
-
0.65 x
mA
ILIMIT(MIN)
170
ns
125
150
oC
Output parameters
ON-state switch resistance
RDS(ON)
ID=
ТJ = 25oC
35mA ТJ = 100oC
16
24
Off-state switch drain current
VBP = 6.2 V,
IDSS
VEN/UV = 0 V,
VDS = 560 V,
TJ = 125oC
A
-
50
Breakdown voltage
VBP = 6.2 V,
V
BVDSS
VEN/UV = 0 V,
700
-
TJ = 25oC, Note 5
DRAIN pin supply voltage
50
-
V
EN/UV pin output signal delay
tEN/UV
-
10
s
NOTES:
1. Total current consumption is the sum of IS1 and IDSS when EN/UV pin is shorted to ground (MOSFET not
switching) and the sum of IS2 and IDSS when EN/UV pin is open (MOSFET switching).
2. Consumption current measurement during the output MOSFET is switching can be performed at 6.1 V on
BYPASS pin.
3. BP pin is not purposed for sourcing supply current to external circuitry.
4. This parameter is derived from characterization.
5. Shutdown voltage can be verified under the specification with minimum of BVDSS on an inclined DRAIN pin
voltage closely, but not exceeding minimum of BVDSS
6. Parameters are guaranteed for constant junction temperature ТJ. Measurements of parameters have to be
processed in pulse modes.
_______________
* Ambient temperature
2012, April Ver. 00
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