K03H1202 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

K03H1202

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKA03N120H2

180ns

160ns

140ns

120ns

100ns

80ns

60ns

40ns

0Ohm

T =150°C

J

T =25°C

J

100Ohm

200Ohm

300Ohm

RG, GATE RESISTANCE

Figure 23. Typical reverse recovery time

as a function of diode current slope

VR=800V, IF=3A,

Dynamic test circuit in Figure E)

0.6uC

0.5uC

T =150°C

J

0.4uC

0.3uC

0.2uC

0Ohm

T =25°C

J

100Ohm

200Ohm

300Ohm

RG, GATE RESISTANCE

Figure 24. Typical reverse recovery

charge as a function of diode current

slope

(VR=800V, IF=3A,

Dynamic test circuit in Figure E)

16A

14A

12A

T =150°C

J

10A

T =25°C

J

8A

0Ohm

100Ohm

200Ohm

300Ohm

RG, GATE RESISTANCE

Figure 25. Typical reverse recovery

current as a function of diode current

slope

(VR=800V, IF=3A,

Dynamic test circuit in Figure E)

-600A/us

-800A/us

-1000A/us

-1200A/us

-1400A/us

-1600A/us

-1800A/us

0Ohm

T =150°C

J

T =25°C

J

100Ohm

200Ohm

300Ohm

RG, GATE RESISTANCE

Figure 26. Typical diode peak rate of fall

of reverse recovery current as a

function of diode current slope

(VR=800V, IF=3A,

Dynamic test circuit in Figure E)

Power Semiconductors

10

Mar-04, Rev. 2

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