K06T60(2013) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K06T60
(Rev.:2013)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

TRENCHSTOP™ Series

IKA06N60T

15V

10V

5V

120V

480V

0V0nC 10 nC 20n C 30nC 40nC 50nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=6 A)

1nF

C iss

100pF

C oss

C rss

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

80A

60A

40A

20A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE  400V, Tj  150C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,

TJmax<150°C)

IFAG IPC TD VLS

8

Rev. 2.5 20.09.2013

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