BC817-25(2009) Просмотр технического описания (PDF) - Diodes Incorporated.
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производитель
BC817-25 Datasheet PDF : 4 Pages
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Features
• Ideally Suited for Automated Insertion
• Epitaxial Planar Die Construction
• For Switching, AF Driver and Amplifier Applications
• Complementary PNP Types Available (BC807)
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Pin Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
Top View
B
E
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCEO
VEBO
IC
ICM
IEM
Value
45
5.0
800
1000
1000
Unit
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation at TSB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθSB
RθJA
TJ, TSTG
Value
310
320
403
-65 to +150
Unit
mW
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 2)
Symbol
Min
Max
Unit
Test Condition
Current Gain Group -16
100
250
DC Current Gain
-25
160
400
-40
250
600
Current Gain Group -16 hFE
60
—
—
VCE = 1.0V, IC = 100mA
-25
100
—
—
VCE = 1.0V, IC = 300mA
-40
170
—
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
VCE(SAT)
—
VBE
—
ICES
—
IEBO
—
fT
100
0.7
V
IC = 500mA, IB = 50mA
1.2
V
VCE = 1.0V, IC = 300mA
100
nA VCE = 45V
5.0
µA VCE = 25V, Tj = 150°C
100
nA VEB = 4.0V
—
MHz VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance
CCBO
—
12
pF VCB = 10V, f = 1.0MHz
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
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