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IDT72V36102 Просмотр технического описания (PDF) - Integrated Device Technology

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IDT72V36102
IDT
Integrated Device Technology IDT
IDT72V36102 Datasheet PDF : 29 Pages
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IDT72V3682/72V3692/72V36102 3.3V CMOS SyncBiFIFOTM
16,384 x 36 x 2, 32,768 x 36 x 2 and 65,536 x 36 x 2
whether or not the FIFO memory is empty. FF shows whether the memory is
full or not. The IR and OR functions are selected in the First Word Fall Through
mode. IR indicates whether or not the FIFO has available memory locations.
OR shows whether the FIFO has data available for reading or not. It marks the
presence of valid data on the outputs.
Each FIFO has a programmable Almost-Empty flag (AEA and AEB) and a
programmable Almost-Full flag (AFA and AFB). AEA and AEB indicate when
a selected number of words remain in the FIFO memory. AFA and AFB indicate
when the FIFO contains more than a selected number of words.
FFA/IRA, FFB/IRB, AFA and AFB are two-stage synchronized to the port
clock that writes data into its array. EFA/ORA, EFB/ORB, AEA and AEB are two-
stage synchronized to the port clock that reads data from its array. Program-
mable offsets for AEA, AEB, AFA and AFB are loaded by using Port A. Three
COMMERCIAL TEMPERATURE RANGE
default offset settings are also provided. The AEA and AEB threshold can be
set at 8, 16 or 64 locations from the empty boundary and the AFA and AFB
threshold can be set at 8, 16 or 64 locations from the full boundary. All these
choices are made using the FS0 and FS1 inputs during Reset.
Two or more devices may be used in parallel to create wider data paths. If,
at any time, the FIFO is not actively performing a function, the chip will
automatically power down. During the power down state, supply current
consumption (ICC) is at a minimum. Initiating any operation (by activating control
inputs) will immediately take the device out of the power down state.
The IDT72V3682/72V3692/72V36102 are characterized for operation
from 0°C to 70°C. Industrial temperature range (-40°C to +85°C) is available
by special order. They are fabricated using IDT’s high speed, submicron
CMOS technology.
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