F1S45N06 Просмотр технического описания (PDF) - Intersil
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F1S45N06 Datasheet PDF : 8 Pages
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RFG45N06, RFP45N06, RF1S45N06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFG45N06, RFP45N06
RF1S45N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RG = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
60
60
45
Refer to Peak Current Curve
±20
Refer to UIS Curve
131
0.877
-55 to 175
300
260
V
V
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V (Figure 11)
60
-
-
V
VGS(TH) VGS = VDS, ID = 250µA (Figure 10)
2
-
4
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V (125oC)
-
-
1
µA
-
25
µA
IGSS VGS = ±20V
-
-
±100
nA
rDS(ON) ID = 45A, VGS = 10V (Figure 9)
-
-
0.028
Ω
tON
td(ON)
tr
VDD = 30V, ID = 45A
RL = 0.667Ω, VGS = +10V
RG = 3.6Ω (Figure 13)
-
-
120
ns
-
12
-
ns
-
74
-
ns
td(OFF)
-
37
-
ns
tf
-
16
-
ns
tOFF
-
-
80
ns
Qg(TOT)
Qg(10)
Qg(TH)
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V, ID = 45A,
RL = 1.07Ω
Ig(REF) = 1.5mA
(Figure 13)
-
125 150
nC
-
67
80
nC
-
3.7
4.5
nC
CISS
COSS
VDS = 25V, VGS = 0V
f = 1MHz (Figure 12)
-
2050
-
pF
-
600
-
pF
CRSS
RθJC
RθJA
-
200
-
pF
-
-
1.14 oC/W
-
-
80
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 45A
-
-
1.5
V
Diode Reverse Recovery Time
trr
ISD = 45A, dISD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-456
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