HGTG20N60C3D Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
HGTG20N60C3D
Fairchild Semiconductor
HGTG20N60C3D Datasheet PDF : 8 Pages
| |||
HGTG20N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
100
TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.76oC/W, SEE NOTES
1
2
5
10
TJ = 150oC, RG = 10Ω,
L = 1mH, VCE = 480V
20
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
14
VCE = 360V, RG = 10Ω, TJ = 125oC
12
10
450
400
ISC
350
8
300
6
250
4
tSC
200
2
150
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
100 DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
80
TC = -55oC
60
TC = 25oC
TC = 150oC
40
20
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
300
DUTY CYCLE <0.5%, VGE = 15V
250 PULSE DURATION = 250µs
TC = 25oC
200
150
TC = -55oC
100
TC = 150oC
50
0
0
1
2
3
4
5
6
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
4.0
RG = 10Ω, L = 1mH, VCE = 480V
3.5
3.0
TJ = 25oC, TJ = 150oC, VGE = 10V
2.5
2.0
1.5
1.0
0.5
0
5
TJ = 25oC, TJ = 150oC, VGE = 15V
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
3.0
RG = 10Ω, L = 1mH, VCE = 480V
2.5
2.0
TJ = 150oC; VGE = 10V OR 15V
1.5
1.0
0.5
TJ = 25oC; VGE = 10V OR 15V
0
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
Share Link: