RFP45N03L Просмотр технического описания (PDF) - Intersil
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RFP45N03L Datasheet PDF : 7 Pages
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RFP45N03L, RF1S45N03L, RF1S45N03LSM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP45N03L, RF1S45N03L,
RF1S45N03LSM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage RGS = 20kΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
45
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Refer to Peak Current Curve
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Refer to UIS Curve
Power Dissipation . . . .
Derate Above 25oC.
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.PD
...
90
0.606
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
BVDSS ID = 250µA, VGS = 0V
30
VGS(TH) VGS = VDS, ID = 250µA
1
IDSS
VDS = Rated BVDSS, VGS = 0V
-
VDS = Rated BVDSS, VGS = 0V, TC = 150oC
-
IGSS
VGS = ±10V
-
rDS(ON) ID = 45A, VGS = 5V (Figure 11
-
tON
VDD = 15V, ID = 45A, RL = 0.33Ω,
-
td(ON)
VGS = 5V, RGS = 5Ω
(Figures 15, 18, 19)
-
tr
-
td(OFF)
-
tf
-
tOFF
-
Qg(TOT)
Qg(5)
Qg(TH)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 24V, ID = 45A, -
RL = 0.533Ω
IG(REF) = 0.6mA
-
(Figures 20, 21)
-
CISS
VDS = 25V, VGS = 0V, f = 1MHz
-
COSS
(Figure 14)
-
CRSS
-
RθJC
-
RθJA
-
TYP MAX UNITS
-
-
V
-
2
V
-
25
µA
-
250
µA
- ±100 nA
- 0.022 Ω
-
260
ns
15
-
ns
160
-
ns
20
-
ns
20
-
ns
-
60
ns
50
60
nC
30
36
nC
1.5 1.8 nC
1650 -
pF
575
-
pF
200
-
pF
-
1.65 oC/W
-
80 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 45A
-
-
1.5
V
Diode Reverse Recovery Time
trr
ISD = 45A, dISD/dt = 100A/µs
-
- 125 ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
7-2
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