IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(VCC = 5.0V ± 10%)
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
VCC = Max.,
VIN = GND to VCC
VCC = Max., CS1 = VIH,
VOUT = GND to VCC
IOL = 8mA, VCC = Min.
IOL = 10mA, VCC = Min.
IOH = –4mA, VCC = Min.
MIL.
COM’L.
MIL.
COM’L.
IDT7164S
Min.
Max.
—
10
—
5
—
10
—
5
0.4
—
0.5
2.4
—
IDT7164L
Min.
Max.
—
5
—
2
—
5
—
2
—
0.4
—
0.5
2.4
—
Unit
µA
µA
V
V
2967 tbl 08
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
Typ. (1)
VCC @
Max.
VCC @
Symbol
Parameter
Test Condition
Min.
2.0v
3.0V
2.0V
3.0V
VDR
VCC for Data Retention
—
2.0
—
—
—
—
ICCDR
Data Retention Current
MIL.
—
10
COM’L. —
10
tCDR(3)
Chip Deselect to Data
Retention Time
1. CS1 ≥ VHC
CS2 ≥ VHC, or
0
—
tR(3)
Operation Recovery Time 2. CS2 ≤ VLC
tRC(2)
—
|ILI|(3)
Input Leakage Current
—
—
15
200
300
15
60
90
—
—
—
—
—
—
—
2
2
NOTES:
1. TA = +25°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Unit
V
µA
ns
ns
µA
2967 tbl 09
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2967 tbl 10
5V
5V
DATA OUT
255Ω
480Ω
30pF*
DATA OUT
255Ω
480Ω
5pF*
2967 drw 03
Figure 1. AC Test Load
2967 drw 04
Figure 2. AC Test Load
(for tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2, tOHZ, tOW, and tWHZ)
*Includes scope and jig capacitances
6.1
4