IDT7164L15D Просмотр технического описания (PDF) - Integrated Device Technology

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IDT7164L15D

CMOS STATIC RAM 64K (8K x 8-BIT)

Integrated Device Technology 

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

(VCC = 5.0V ± 10%)

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VCC = Max.,

VIN = GND to VCC

VCC = Max., CS1 = VIH,

VOUT = GND to VCC

IOL = 8mA, VCC = Min.

IOL = 10mA, VCC = Min.

IOH = –4mA, VCC = Min.

MIL.

COM’L.

MIL.

COM’L.

IDT7164S

Min.

Max.

—

10

—

5

—

10

—

5

0.4

—

0.5

2.4

—

IDT7164L

Min.

Max.

—

5

—

2

—

5

—

2

—

0.4

—

0.5

2.4

—

Unit

µA

µA

V

V

2967 tbl 08

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)

Typ. (1)

VCC @

Max.

VCC @

Symbol

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

VDR

VCC for Data Retention

—

2.0

—

—

—

—

ICCDR

Data Retention Current

MIL.

—

10

COM’L. —

10

tCDR(3)

Chip Deselect to Data

Retention Time

1. CS1 ≥ VHC

CS2 ≥ VHC, or

0

—

tR(3)

Operation Recovery Time 2. CS2 ≤ VLC

tRC(2)

—

|ILI|(3)

Input Leakage Current

—

—

15

200

300

15

60

90

—

—

—

—

—

—

—

2

2

NOTES:

1. TA = +25°C.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but is not production tested.

Unit

V

µA

ns

ns

µA

2967 tbl 09

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

GND to 3.0V

5ns

1.5V

1.5V

See Figures 1 and 2

2967 tbl 10

5V

5V

DATA OUT

255Ω

480Ω

30pF*

DATA OUT

255Ω

480Ω

5pF*

2967 drw 03

Figure 1. AC Test Load

2967 drw 04

Figure 2. AC Test Load

(for tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2, tOHZ, tOW, and tWHZ)

*Includes scope and jig capacitances

6.1

4

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