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Номер в каталоге
Компоненты Описание
DG858DW45 Просмотр технического описания (PDF) - Dynex Semiconductor
Номер в каталоге
Компоненты Описание
производитель
DG858DW45
Gate Turn-Off Thyristor
Dynex Semiconductor
DG858DW45 Datasheet PDF : 7 Pages
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DG858DW45
0.9VD
VD
0.9IT
dVD/dt
IT
VD VDM
0.1VD
td tr
dIFG/dt
tgt
IFG
0.1IFG
VFG
tw1
VDP
tgs
ITAIL
tgf
tgq
IG(ON)
0.1IGQ
QGQ
0.5IGQM
IGQM
V(RG)BR
VRG
Recommended gate conditions:
I
TCM
= 3000A
I
FG
= 40A
I
G(ON)
= 10A d.c.
t
w1(min)
= 20
µ
s
I
GQM
= 1200A
di
GQ
/dt = 40A/
µ
s
Q
GQ
= 12500
µ
C
V
RG(min)
= 2V
V
RG(max)
= 18V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Figure 3. General switching waveforms
5/7
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