DSF8045SK Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

DSF8045SK

Fast Recovery Diode

Dynex Semiconductor 

DSF8045SK

CURRENT RATINGS

Symbol

Parameter

Double Side Cooled

IF(AV)

IF(RMS)

Mean forward current

RMS value

IF

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

IF(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

Conditions

Half wave resistive load, Tcase = 65oC

T = 65oC

case

Tcase = 65oC

Half wave resistive load, T = 65oC

case

Tcase = 65oC

T = 65oC

case

Conditions

10ms half sine; with 0% V T = 150oC

RRM, j

10ms half sine; with 50% VRRM, Tj = 150oC

Max. Units

430

A

680

A

600

A

285

A

445

A

380

A

Max. Units

3.5

kA

61.25 x 103 A2s

2.8

kA

39.2 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

T

vj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

2/7

Conditions

Double side cooled

Single side cooled

Clamping force 8.0kN

with mounting compound

dc

Anode dc

Cathode dc

Double side

Single side

Forward (conducting)

Min. Max. Units

- 0.048 oC/W

-

0.09 oC/W

- 0.103 oC/W

-

0.01 oC/W

-

0.02 oC/W

-

150

oC

-55 175

oC

7.0 9.0 kN

www.dynexsemi.com

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