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HGTG11N120CND

43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor 

HGTG11N120CND

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-On Energy

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

Thermal Resistance Junction To Case

SYMBOL

td(ON)I

trI

td(OFF)I

tfI

EON

EOFF

V EC

t rr

RθJC

TEST CONDITIONS

IGBT and Diode at TJ = 150oC,

ICE = 11A,

VCE = 960V,

VGE = 15V,

RG = 10Ω,

L = 2mH,

Test Circuit (Figure 20)

IEC = 11A

IEC = 11A, dlEC/dt = 200A/µs

IEC = 1A, dlEC/dt = 200A/µs

IGBT

Diode

MIN TYP MAX UNITS

-

21

24

ns

-

12

16

ns

-

210

280

ns

-

360

400

ns

-

1.9

2.5

mJ

-

2.1

2.5

mJ

-

2.6

3.2

V

-

60

70

ns

-

32

40

ns

-

-

0.42

oC/W

-

-

1.25

oC/W

NOTE:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

45

40

35

30

25

20

15

10

5

0

25

VGE = 15V

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

60

50

TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH

40

30

20

10

0

0

200 400 600 800 1000 1200 1400

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2001 Fairchild Semiconductor Corporation

HGTG11N120CND Rev. B

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