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HYS72D256520GR Просмотр технического описания (PDF) - Infineon Technologies

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HYS72D256520GR
Infineon
Infineon Technologies Infineon
HYS72D256520GR Datasheet PDF : 25 Pages
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2
Pin Configuration
HYS72D256520GR-7-A
Registered Double Data Rate SDRAM Modules
Pin Configuration
Table 3 Pin Definitions and Functions
Symbol
Type
A0 - A11,A12
BA0, BA1
DQ0 - DQ63
CB0 - CB7
RAS
CAS
WE
CKE0, CKE1
DQS0 - DQS8
CK0, CK0
DQS9 - DQS17
CS0 - CS1
VDD
VSS
VDDQ
VDDID
VDDSPD
VREF
SCL
SDA
SA0 - SA2
NC
DU
RESET
Function
Address Inputs
(A12 for 256Mb & 512Mb based modules)
Bank Selects
Data Input/Output
Check Bits (×72 organization only)
Row Address Strobe
Column Address Strobe
Read/Write Input
Clock Enable
SDRAM low data strobes
Differential Clock Input
SDRAM low data mask/
high data strobes
Chip Selects
Power (+2.5 V)
Ground
I/O Driver power supply
VDD Indentification flag
EEPROM power supply
I/O reference supply
Serial bus clock
Serial bus data line
slave address select
no connect
don’t use
Reset pin (forces register inputs low)1)
1) for detailed description of the Power Up and Power Management on DDR Registered DIMMs see the Application Note at
the end of this datasheet
Table 4
Density
2 GB
Address Format
Organization Memory SDRAMs
Ranks
256M x 72 2
(512Mb)
128M × 4
# of
# of row/bank/
SDRAMs column bits
36
13/2/12
(stacked)
Refresh
8k
Period Interval
64 ms 7.8 µs
Data Sheet
8
Rev. 1.02, 2003-12
10282003-P6EY-RWQ2

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