HY57V641620HGLT-7 Просмотр технического описания (PDF) - Hynix Semiconductor
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HY57V641620HGLT-7 Datasheet PDF : 12 Pages
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HY57V641620HG
4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG(L)T-8
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
125MHz(8ns)
3CLKs
3CLKs
7CLKs
10CLKs
3CLKs
6ns
3ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
3CLKs
6ns
3ns
83MHz(12ns)
3CLKs
3CLKs
6CLKs
9CLKs
2CLKs
6ns
3ns
HY57V641620HG(L)T-P
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
3ns
83MHz(12ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
3ns
66MHz(15ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
3ns
HY57V641620HG(L)T-S
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz(10ns)
3CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
3ns
83MHz(12ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
3ns
66MHz(15ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
3ns
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.8/Dec. 02
10
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