HX6256NSRT Просмотр технического описания (PDF) - Honeywell International

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Компоненты Описание

производитель

HX6256NSRT

32K x 8 Static RAM

Honeywell International 

HX6256

DC ELECTRICAL CHARACTERISTICS

Symbol

IDDSB1

Parameter

Static Supply Current

IDDSBMF

Standby Supply Current –

Deselected

IDDOPW

Dynamic Supply Current –

Selected (Write)

IDDOPR

Dynamic Supply Current –

Selected (Read)

Typical

(1)

0.2

0.2

3.4

2.8

Worst Case (2)

Min

Max

1.5

1.5

4.0

4.0

Units

Test Conditions

mA

VIH=VDD, IO=0

VIL=VSS, f=0MHz

mA

NCS=VDD, IO=0,

f=40 MHZ

mA

F=1 MHz, IO=0, CE=VIH=VDD

NCS=VIL=VSS (3)

mA

F=1 MHz, IO=0, CE=VIH=VDD

NCS=VIL=VSS (3)

II

Input Leakage Current

-5

+5

µA VSS ≤ VI ≤ VDD

IOZ

Output Leakage Current

-10

+10

µA

VSS ≤ VI ≤ VDD

Output = high Z

VIL

Low-Level Input Voltage CMOS 1.7

TTL

0.3xVDD

0.8

V

March Pattern

VDD = 4.5V

VIH

High-Level Input Voltage CMOS 3.2 0.7xVDD

TTL

2.2

V

March Pattern

VDD = 4.5V

VOL

Low-Level Output Voltage

0.3

0.05

0.4

0.05

VDD=4.5V, IOL = 10 mA (CMOS)

V

= 8 mA (TTL) VDD=4.5V, IOL = 200

µA

VOH

High-Level Output Voltage

4.3

4.5

4.2

VDD-

0.05

V

VDD=4.5V, IOH=-5mA

VDD=4.5V, IOH=-200 µA

(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.

(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, TA=-55°C to +125°C, post total dose at 25°C.

(3) All inputs switching. DC average current.

www.honeywell.com/radhard

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