HX6256NSHC Просмотр технического описания (PDF) - Honeywell International

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HX6256NSHC

32K x 8 Static RAM

Honeywell International 

HX6256

RADIATION CHARACTERISTICS

Total Ionizing Radiation Dose

The SRAM will meet all stated functional and electrical

specifications over the entire operating temperature

range after the specified total ionizing radiation dose. All

electrical and timing performance parameters will remain

within specifications after rebound at VDD = 5.5 V and T

=125°C extrapolated to ten years of operation. Total

dose hardness is assured by wafer level testing of

process monitor transistors and RAM product using 10

KeV X-ray and Co60 radiation sources. Transistor gate

threshold shift correlations have been made between 10

KeV X-rays applied at a dose rate of 1x105

rad(SiO2)/min at T = 25°C and gamma rays (Cobalt 60

source) to ensure that wafer level X-ray testing is

consistent with standard military radiation test

environments.

Transient Pulse Ionizing Radiation

The SRAM is capable of writing, reading, and retaining

stored data during and after exposure to a transient

ionizing radiation pulse up to the transient dose rate

upset specification, when applied under recommended

operating conditions. To ensure validity of all specified

performance parameters before, during, and after

radiation (timing degradation during transient pulse

radiation is ≤10%), it is suggested that stiffening

capacitance be placed on or near the package VDD and

VSS, with a maximum inductance between the package

(chip) and stiffening capacitance of 0.7 nH per part. If

there are no operate-through or valid stored data

requirements, typical circuit board mounted de-coupling

capacitors are recommended.

The SRAM will meet any functional or electrical

specification after exposure to a radiation pulse up to the

transient dose rate survivability specification, when

applied under recommended operating conditions. Note

that the current conducted during the pulse by the RAM

inputs, outputs, and power supply may significantly

exceed the normal operating levels. The application

design must accommodate these effects.

Neutron Radiation

The SRAM will meet any functional or timing

specification after exposure to the specified neutron

fluence under recommended operating or storage

conditions. This assumes equivalent neutron energy of 1

MeV.

Soft Error Rate

The SRAM is immune to Single Event Upsets (SEU’s) to

the specified Soft Error Rate (SER), under

recommended operating conditions. This hardness level

is defined by the Adams 90% worst case cosmic ray

environment for geosynchronous orbits.

Latchup

The SRAM will not latch up due to any of the above

radiation exposure conditions when applied under

recommended operating conditions. Fabrication with the

SOI substrate material provides oxide isolation between

adjacent PMOS and NMOS transistors and eliminates

any potential SCR latchup structures. Sufficient

transistor body tie connections to the p- and n-channel

substrates are made to ensure no source/drain

snapback occurs.

RADIATION HARDNESS RATINGS (1)

Parameter

Limits (2)

Units

Test Conditions

Total Dose

≥1x106

rad(SiO2) TA=25°C

Transient Dose Rate Upset (3)

≥1x109

rad(Si)/s Pulse width ≤ µs

Transient Dose Rate Survivability (3)

≥1x1011

rad(Si)/s

Pulse width ≤50 ns, X-ray, VDD=6.0V, TA=25°C

Soft Error Rate (SER)

<1x10-10 upsets/bit-day TA=25°C, Adams 90% worst case environment

Neutron Fluence

≥1x1014

N/cm2

1 MeV equivalent energy, Unbiased, TA=25°C

(1) Device will not latch up due to any of the specified radiation exposure conditions.

(2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, TA=-55°C to 125°C.

(3) Not guaranteed with 28–Lead DIP.

www.honeywell.com/radhard

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