HVD365 Просмотр технического описания (PDF) - Renesas Electronics

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HVD365

Variable Capacitance Diode for VCO

Renesas Electronics 

HVD365

Absolute Maximum Ratings

Item

Reverse voltage

Junction temperature

Storage temperature

VR

Tj

Tstg

Symbol

Value

15

125

−55 to +125

(Ta = 25°C)

Unit

V

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse current

IR1

IR2

Capacitance

C1

C4

Capacitance ratio

n

Series resistance

rS

ESD-Capability *1



—

—

10

nA VR =10 V

—

—

100

VR = 10 V, Ta = 60°C

27.05

—

28.55

pF VR = 1 V, f = 1 MHz

6.05

—

7.55

VR = 4 V, f = 1 MHz

3.00

—

—

—

C1 / C4

—

—

1.50

Ω

VR = 4 V, f = 100 MHz

200

—

—

V

C = 200 pF , R = 0 Ω, Both forward

and reverse direction 1 pulse.

Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V

2. For SFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip

part is considered as unquestioned. Please kindly consider soldering nature.

Rev.3.00 Jan 24, 2006 page 2 of 4

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