HUFA75631SK8T Просмотр технического описания (PDF) - Fairchild Semiconductor
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HUFA75631SK8T Datasheet PDF : 11 Pages
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HUFA75631SK8
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TA = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 5.5A, VGS = 10V (Figure 9)
RθJA
Pad Area = 0.76 in2 (490.3 mm2) (Note 2)
(Figures 20, 21)
Pad Area = 0.054 in2 (34.8 mm2) (Note 3)
(Figures 20, 21)
Pad Area = 0.0115 in2 (7.42 mm2)(Note 4)
(Figures 20, 21)
SWITCHING SPECIFICATIONS
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
VDD = 50V, ID = 5.5A
VGS = 10V, RGS = 6.8Ω
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V, ID = 5.5A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 5.5 A
ISD = 2.5 A
ISD = 5.5 A, dISD/dt = 100A/µs
ISD = 5.5 A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
100
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
2
-
4
V
-
0.033 0.039
Ω
-
-
50
oC/W
-
-
152 oC/W
-
-
189 oC/W
-
-
50
ns
-
11
-
ns
-
23
-
ns
-
39
-
ns
-
31
-
ns
-
-
105
ns
-
66
79
nC
-
35
43
nC
-
2.4
2.9
nC
-
4.75
-
nC
-
12
-
nC
-
1225
-
pF
-
330
-
pF
-
105
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
-
-
96
ns
-
-
310
nC
©2001 Fairchild Semiconductor Corporation
HUFA75631SK8 Rev. B
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