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5962F9563101QEC Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
5962F9563101QEC
Radiation Hardened Quad Differential Line Receiver
Intersil
5962F9563101QEC Datasheet PDF : 3 Pages
1
2
3
Die Characteristics
DIE DIMENSIONS:
84 mils x 130 mils
(2140µm x 3290µm)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 10k
Å
±
1k
Å
Top Metallization:
M1: Mo/Tiw
Thickness: 5800
Å
M2: Al/Si/Cu
Thickness: 10k
Å
±
1k
Å
Substrate:
AVLSI1RA
Metallization Mask Layout
HS-26CT32RH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
V
DD
(When Powered Up)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
240
Bond Pad Size:
110µm x 100µm
HS-26CT32RH
AIN
V
DD
BIN
(1)
(16)
(15)
AIN (2)
(14) BIN
AOUT (3)
ENAB (4)
COUT (5)
CIN (6)
(13) BOUT
(12) ENAB
(11) DOUT
(10) DIN
(7)
(8)
(9)
CIN
GND
DIN
3
FN2930.4
August 7, 2008
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