HRW0202B Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

HRW0202B

Silicon Schottky Barrier Diode for Rectifying

Renesas Electronics 

HRW0202B

0.08

0A t

0.06

T

Tj = 25°C

D = —Tt

0.04

D=1/6

sin(θ=180°)

D=1/3

D=1/2

DC

0.02

0

0 0.02 0.04 0.06 0.08 0.10

Forward current IF (A)

Fig.4 Forward power dissipation vs. Forward current

0.06

0V

0.05

0.04

t

T

Tj = 125°C

D = —t

T

0.03

0.02

D=5/6

D=2/3

D=1/2

sin(θ=180°)

0.01

0

0 5 10 15 20 25

Reverse voltage VR (V)

Fig.5 Reverse power dissipation vs. Reverse voltage

0.12

0.10

sin(θ=180°)

DC

0.08

D=1/2

0.06

D=1/3

D=1/6

0.04

VR=VRRM/2

0.02 Tj =125°C

Rth(j-a)=400°C/W

Per one device

0

−25 0 25 50

75 100 125

Ambient temperature Ta (°C)

Fig.6 Average rectified current vs. Ambient temperature

0.25

0.20

D=1/2

DC

sin(θ=180°)

0.15

D=1/3

0.10

D=1/6

0.05 VR=VRRM/2

Tj =125°C

Rth(j-a)=400°C/W

Two device total

0

−25 0 25 50

75 100 125

Ambient temperature Ta (°C)

Fig.7 Average rectified current vs. Ambient temperature

Rev.2.00, Dec.15.2003, page 4 of 5

Share Link: