HRW0202 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

HRW0202

Silicon Schottky Barrier Diode for Rectifying

Hitachi -> Renesas Electronics 

HRW0202A

Absolute Maximum Ratings (Ta = 25°C) *1

Item

Symbol

Repetitive peak reverse

V *2

RRM

voltage

Average rectified current

Non-Repetitive peak

forward surge current

I

*2

O

I *3

FSM

Junction temperature

Tj

Storage temperature

Tstg

Notes 1. Two device total

Notes 2. See from Fig.4 to Fig.7

Notes 3. 10msec sine wave 1 pulse

Value

Unit

20

V

200

mA

3

A

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)*1

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF

Reverse current

IR

Thermal resistance Rth(j-a)

Notes 1. Per one device

Notes 2. Polyimide board

— — 0.40 V

IF = 100 mA

— — 50 µA VR = 20V

— 350 — °C/W Polyimide board*2

20hx15wx0.8t

1.5

Unit: mm

1.5

2

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